Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe
نویسندگان
چکیده
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China Department of Materials Science and Engineering, National Dong Hwa University, Shoufeng, Hualien 974, Taiwan, Republic of China Department of Electrical Engineering, National Taiwan Ocean Univesity, Keelung 202, Taiwan, Republic of China Center for Advanced Technology (CAT) on Photonic Materials and Applications, Center for Analysis of Structures and Interfaces (CASI), Department of Chemistry, City College-CUNY, New York, NY 10031, USA
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Temperature dependence of the band gap shrinkage due to electron-phonon interaction in undoped n-type GaN
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